Quantitative analysis of electric force microscopy: The role of sample geometry
نویسندگان
چکیده
Quantitative electric force microscopy sEFMd is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructures, possess interesting nanoscale electrical properties in addition to complex topography. Here we present techniques for analysis of EFM images of such samples, using voltage modulated EFM augmented by three-dimensional simulations. We demonstrate the effectiveness of these techniques in analyzing EFM images of self-assembled SiGe nanostructures on insulator, report measured dielectric properties, and discuss the limitations sample topography places on quantitative measurement. © 2005 American Institute of Physics. fDOI: 10.1063/1.1898183g
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